DMBT5401 discrete semiconductors r dc components co., ltd. technical specifications of pnp epitaxial planar transistor description designed for general purpose applications requiring high breakdown voltage. pinning 1 = base 2 = emitter 3 = collector .091(2.30).067(1.70) sot-23 dimensions in inches and (millimeters) .063(1.60).055(1.40) .108(0.65).089(0.25) .045(1.15).034(0.85) .118(3.00) .110(2.80) .020(0.50).012(0.30) .0043(0.11) .0035(0.09) .004 (0.10) .051(1.30).035(0.90) .026(0.65).010(0.25) max .027(0.67).013(0.32) 2 1 3 characteristic symbol rating unit collector-base voltage vcbo -160 v collector-emitter voltage vceo -150 v emitter-base voltage vebo -5 v collector current ic -500 ma total power dissipation pd 225 mw junction temperature tj +150 oc storage temperature tstg -55 to +150 oc absolute maximum ratings(ta=25oc) characteristic symbol min typ max unit test conditions collector-base breakdown volatge bvcbo -160 - - v ic=-100ma collector-emitter breakdown voltage bvceo -150 - - v ic=-1ma emitter-base breakdown volatge bvebo -5 - - v ie=-10ma collector cutoff current icbo - - -50 na vcb =-120v collector-emitter saturation voltage (1) vce(sat)1 - - -0.2 v ic=-10ma, ib=-1ma vce(sat)2 - - -0.5 v ic=-50ma, ib=-5ma base-emitter saturation voltage (1) vbe(sat)1 - - -1 v ic=-10ma, ib=-1ma vbe(sat)2 - - -1 v ic=-50ma, ib=-5ma hfe1 50 - - - ic=-1ma, vce=-5v dc current gain(1) hfe2 60 - 240 - ic=-10ma, vce=-5v hfe3 50 - - - ic=-50ma, vce=-5v transition frequency ft 100 - 300 mhz ic=-10ma, vce =-10v, f=100mhz output capacitance cob - - 6 pf vcb =-10v, f=1mhz electrical characteristics(ratings at 25 oc ambient temperature unless otherwise specified) (1)pulse test: pulse width 380ms, duty cycle 2%
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